Ion Bombardment Enhanced Selective Etching of Garnets
نویسندگان
چکیده
منابع مشابه
Enhanced wet etching of patterned GaN with ion implantation.
We present the enhanced wet etching of GaN epilayer implanted with Au+ ion. Patterned GaN with 2 microm-wide sink-like strips was achieved by using 500 keV Au+ ion implantation and KOH etching. The Dependence of etching depth on etching time for the implantation at different ion fluences was investigated. The experiment showed that the damaged GaN area could be almost etched out at high ion flu...
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The reactive ion etching ofInP, InGaAs, and InAIAs in CClzF2/02 or C2R(/H2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate, and relative composition. The etch rates of these materials are a factor of 3-5 X faster in CC12F 2/0 2 (-600--1000 AminJ ) compared to CzHJH2 (160-320 AminI ). Significantly smoother morphologies are obtained with C2H6...
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ژورنال
عنوان ژورنال: IEEJ Transactions on Fundamentals and Materials
سال: 1976
ISSN: 0385-4205,1347-5533
DOI: 10.1541/ieejfms1972.96.527